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PR
Photoresist
PR is a material to form image pattern using the changed solubility in a developer by being exposed to light or radiation. It is a liquid type composed of high matrix molecule, sensitizer, additive, and solvent.

Usage

  • Memory
  • Nonmemory semiconductor

Features

  • Excellent resolution, process margin, etch resistance, and line width roughness (LWR)

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Photoresist(ArF)
테이블
Category Grade CD(nm) Thickness(A) SOB Temp.(℃),Time(sec) PEB Temp.(℃),Time(sec)
Photoresist(ArF) ArF Dry 55~90 1400~7500 100~115℃; 50~90sec 105~130℃; 50~80sec
ArF Immersion 35~55 800~1000 100℃; 60sec 90~115℃; 60sec
Photoresist(KrF)
테이블
Category Grade CD(um) Thickness(um) SOB Temp., Time(sec) PEB Temp., Time(sec)
Photoresist(KrF) KrF Thick 1~10 5~10 110~140℃; 50~90sec 100~130℃; 50~90sec

Contact

테이블
Division Region Name TEL EMAIL
Sales Jinhan Lee +82-2-6961-2003 mail
Technical Service Hyunsoon Lim +82-41-423-3211 mail
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